Sumin Hong

Sumin Hong

January 2024 – Aug 2026

  • MS Student
  • UNIST Nanoelectronics and Advanced Packaging Lab (UNL) MS Student, TD Team
  • Downscaled Top-Gate 2D FETs

BIO

Sumin Hong conducted research on MoS₂-based top-gate 2D transistors with the goal of improving device stability. In particular, she investigated the interactions and exchange behavior between sulfur vacancies and oxygen in MoS₂, aiming to better understand the mechanisms by which defect engineering can enhance the stability of 2D semiconductor devices. Through this work, she played an important role in establishing a foundation for 2D material and device research in our laboratory. Through her consistent dedication to research, she contributed to publications in Advanced Functional Materials and ACS Nano, supporting the research achievements of our group. Although pioneering a new research area involved many trials and challenges, it was especially impressive to see her persist through the process and steadily build her own experience and practical expertise. Above all, Sumin left many warm and lasting memories with the people around her. She brought positive energy wherever she went and had a natural ability to brighten the atmosphere. With her warm and caring personality, she was always attentive to her colleagues and was often the first to offer comfort and encouragement when someone was going through a difficult time. She also showed remarkable resilience and optimism, quickly finding the strength to move forward even when facing challenges of her own. We sincerely wish her continued growth and success in the next chapter of her journey, and hope that she will continue to inspire and support those around her with the same bright energy and warm heart.

Education

  • MS / Graduate School of Semiconductor Materials and Devices Engineering, UNIST (Mar 2024 - July 2026)
  • BS / Department of Nanotechnology & Advanced Materials Engineering, Sejong University (Mar 2019 – Feb 2023)

Publications in Lab

Journal

  1. Back-end-of-line-compatible passivation of sulfur vacancies in MoS2 transistors using electron-withdrawing benzenethiol
    Co-author · ACS Nano 19, 6069-6078 (2025).
  2. Statistically resolving thickness-dependent electrical characteristics in multilayer-MoS2 transistors
    Co-author · Advanced Functional Materials 36, e32204 (2026).