- Title: Statistically Resolving Thickness-Dependent Electrical Characteristics in Multilayer-MoS2 Transistors (link)
This work identifies multilayer MoS2 flake thickness from optical intensity and applies algorithmic filtering to select high-quality flakes.
From more than 120,000 candidate flakes, the team fabricated and analyzed 1,615 transistors, statistically resolving charge-injection and transport behavior as a function of channel thickness (layer number).
By establishing a large-scale data correlation between flake thickness and electrical characteristics, the work provides a practical basis for systematic device design and accelerated 2D semiconductor research workflows.
This research was supported by NRF, KEIT, and related Ministry of Science and ICT / MOTIE funding programs.