Paper Co-First-Authored by Heesoo Yang and Hyeongjun Kim (Integrated M.S./Ph.D., 2nd year) Accepted to IEEE VLSI Symposium 2026

A paper with Heesoo Yang (integrated M.S./Ph.D., 2nd year) and Hyeongjun Kim (integrated M.S./Ph.D., 2nd year) as co-first authors has been accepted to the IEEE Symposium on VLSI Technology and Circuits (VLSI) 2026, one of the most prestigious international conferences on integrated devices and circuits.

The work was carried out in collaboration with Hanbat National University (Prof. Seongju Kim) and UNIST (Prof. Dongyun Kam).

• Title: Vertical-Die (V-die) 3.5D Integration for Cool Ultrahigh-Bandwidth Memory Systems