Two Student Papers Accepted to IEEE VLSI Symposium 2026

Heesoo Yang (combined M.S./Ph.D. student, Year 2) and Hyeongjun Kim (combined M.S./Ph.D. student, Year 2) had papers accepted to the IEEE Symposium on VLSI Technology and Circuits (VLSI) 2026.

This outcome was achieved through joint research with Hanbat National University (Prof. Seongju Kim) and UNIST (Prof. Dongyun Kam), and focuses on V-die 3.5D integration strategies for cool ultrahigh-bandwidth memory systems.