• Title: Oxygen-Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute-In-Memory Systems (link)

    This work proposes an oxygen-tunnel (SiN/SiO2/SiN) architecture for indium tin oxide (ITO) vertical-channel transistors, enabling simultaneous improvement of drive current and reliability for monolithic 3D embedded memory.

    The proposed structure precisely controls oxygen transport, suppressing electrode oxidation while stabilizing the ITO channel, achieving a record-high current density of 436 μA/μm and excellent bias-stress stability.

    Based on these devices, we demonstrated capacitor-less gain-cell memory with over 648 s retention and more than 1,200 write/read cycles.

    System-level evaluations further showed that hybrid Si-CMOS/ITO integration can reduce memory cell area while extending data retention and improving compute-in-memory performance for next-generation AI hardware.

    This research was supported by NRF, KEIT, and related Ministry of Science and ICT / MOTIE funding programs.